SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- April 23, 2017
Empower RF product lines incorporate state-of-the-art GaN, LDMOS, MOSFET, GaAsFET and bipolar device technologies.
Wireless Components is proud to be the chosen supplier of EMPOWER RF in both Australia and New Zealand. Their extensive library of product designs includes over four hundred documented solutions ranging from basic-function PA modules to complete, multifunction PA assemblies with embedded software and controllers. Empower RF leverages “building block” combinations of these documented solutions and the extensive experience of our technical team to react swiftly to new requirements and to offer a variety of cost-effective, value-added solutions.
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High Power RF Amplifiers with stop frequencies up to 500MHz, 1000MHz, 2500MHz and 6000MHz
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Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
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