SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- March 1, 2018
Content-rich GaN webinar presented by Qorvo, Modelithics & Keysight Technologies, hosted by Microwave Journal.
Tuesday, March 13, 2018
11am-12pm Eastern Daylight Time
This webinar will focus on model-based PA design methods, utilizing Keysight Advanced Design System simulation software along with state-of-the-art non-linear GaN models available from Modelithics for a range of Qorvo high-performance GaN-on-SiC power transistors. A systematic design flow will be exemplified for the case of a 160W Class AB GaN reference design that achieved all goals with no tuning required. Applications of similar flows to other high-efficiency modes such as Class E/F, Class J and Doherty® amplifier configurations will also be discussed.
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
