SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- February 28, 2019
12.5W CW, 20-3000MHz Power Transistor.
FEATURES
APPLICATIONS
TUNED DEMO BOARDS
DESCRIPTION
The TA8210D is a broadband capable 12.5W GaN on Silicon power transistor covering 20MHz to 3GHz frequency bands for power amplifier applications. The input and output can be matched on board for best power and efficiency for the desired band.
The TA8210D is packaged in a compact, low cost Quad Flat No lead (QFN) 3x6mm, 32 leads plastic package.
Contact us to discuss pricing and availability.
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
