SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- February 28, 2019
Employed in electronic warfare systems where high power, low loss and excellent isolation are required.
A dual directional coupler is employed to measure forward and reflected power. This unit operates across the 800-3000 MHz range. CW power input is 150W. This switch operates from +28Vdc supply with 500 mA maximum current draw. (Request SCD 70309 for all operating parameters). Unit operates from -40°C to +85°C up to 15,000 feet altitude. This switch meets the conditions specified in MIL-STD-202G, Method 213, Test Condition J (30G, 11mS, 18 Shocks – 3 in each of 6 axes). This unit also meets the conditions specified in MIL-STD-202G, Method 105C, Test Condition A. Other key points of this design are:
Datasheet available here – SSHPS.C-0.800-3.000-150
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
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