SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- November 22, 2015
The merger of RFMD and TriQuint is completed and the company will now be operating under the name Qorvo.
The organisation brings togerther all critical RF building blocks needed to simplify design, reduce size and conserve power while improving system performance across mobile. infrastructure and aerospace/defense applications. For the product selection guides, click the corresponding PDF below.
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| RFMD Product Selection Guide |
TriQuint Product Selection Guide |
RFMD New Product Guide |
RFMD Signal Source Guide |
Wireless Components is pleased to continue offering the high quality products from TriQuint and the new lines available from RFMD under Qorvo. Contact us today with your technical requirements
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
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