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RF Switches in silicon by Analog Devices

RF Switches in silicon by Analog Devices

ADRF5132 and ADRF5250

ADRF5132
High Power, 20 W Peak, Silicon SPDT, Reflective Switch; 0.7 GHz to 5.0 GHz

    • Reflective, 50 Ω design
    • High power handling at TCASE = 105°C

   – Long-term (>10 years operation)

                  – Peak power: 43 dBm
– CW power: 38 dBm
– LTE power average (8 dB PAR): 35 dBm


ADRF5250
0.1 GHz to 6 GHz Silicon SP5T Switch

  • Nonreflective 50 Ω design
  • Low insertion loss: 1.5 dB at 4 GHz
  • High isolation: 50 dB at 4 GHz
  • High input linearity
    – 0.1 dB compression (P0.1dB): 34 dBm typical
    – Third-order intercept (IP3): 57 dBm typical

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