SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- December 7, 2022
Key Features
Frequency Range: 13.75 – 14.5 GHz
PSAT: 47.5 dBm
Typical Applications
Satellite Communications
Datalinks
Qorvo’s QPA1314T is a high power MMIC amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15), mounted to a high thermal conductivity tab. Operating between 13.75 and 14.5 GHz, it achieves 55 W saturated output power. Operating frequency extends to 12.75 – 15.35 GHz.
To simplify system integration, the QPA1314T is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. Its RF ports are DC coupled to ground for optimum ESD performance.
The QPA1314T is ideal for supporting communications and radar applications in both commercial and military markets.
The QPA1314T is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Product Data Sheet – Rev A – 05/2022
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