SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- November 2, 2020
From YIC, a Taiwan based organisation focused on research, design and manufacture of Frequency Control Products, as well as GPS/GNSS Receiver Modules, GPS / GNSS Receivers (G-Mouse) & GPS / RF Antennas.
YIC offer robust reference designs support documentation including application notes and product selection guide for their full range of products
The newest addition to the YIC family of products, and designed for wearable/portable applications, the YIC71513PGMGG and YIC71009EBGG modules offer-
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
