SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- December 13, 2022
SATCOM market demand has been increasing dramatically in recent years. Multiple research reports estimate that the LEO Satellite market will triple in the next six years. The growing market will also drive technologies to provide higher throughput, wider bandwidth, lower latency, and smaller size. This webinar will cover brief market trends and important system considerations along with how key components like power amplifiers, low noise amplifiers, and mixers impact overall system performance. The webinar is suitable for sales members and engineers who are interested in RF design for satellite communication.
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Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
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