SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- August 29, 2022
JQL has developed 5mm x 5mm microstrip isolator & circulator in the Q/V bands besides coaxial and waveguide devices up to 50.2 Ghz with very low insertion loss. These units are ideal for High Throughput Satellite programs.
Microstrip Devices
Coaxial Devices
Waveguide Devices
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Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
