SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- August 9, 2022
Innovative Power Products announces a full line of Terminations constructed with Aluminium Nitride (AlN) ceramic for low thermal resistance and capacitance.
IPP’s line of RF / Microwave Terminations offer a compact, high power, high frequency solution for the most demanding applications. Choose from Flanged, Flangeless, or Connectorized RF Terminations. IPP terminations are constructed on copper flanges and Aluminium Nitride (AlN) ceramic which provides a very low thermal resistance and excellent VSWR at higher frequencies. Standard Termination values are 50 ohms with power levels from 30 Watts to 650 Watts. These products are available with a connector, bolt-down flange and solder down packages with a silver contact tab.
Flanged Terminations
IPP flanged RF terminations are constructed on copper flanges and Aluminium Nitride (AlN) ceramic for low thermal resistance and excellent VSWR at higher frequencies. Flanged RF Terminations are available in Frequency Ranges from DC to 8.5 GHz, in Power Levels up to 650 Watts CW. These terminations are designed to be screw down mounted to a heat sink. Standard Termination values are 50 ohms. Other values are available upon request.
Flangeless Terminations
IPP’s Flangeless Terminations are designed to be soldered directly to the heat sink for the best possible heat transfer. Aluminium Nitride (AlN) ceramic is used to create a very low thermal resistance and low capacitance. Our Flangeless Terminations are available in frequencies from DC to 8.5 GHz at power levels up to 350W. Standard Termination values are 50 ohms. Other resistance values available upon request.
Connectorized Terminations
IPP connectorized RF terminations are designed to be screwed down to a heat sink for conduction cooling. Depending upon the power these connectorized Terminations are available with SMA or N connectors. Other connector options available upon request. Frequency ranges are available from DC to 6 GHz. with power levels from 30 Watt to 650 Watts.
Contact Us today to discuss your design and to organise samples.
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
