SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- January 24, 2019
A change in law means discontinuation of certain items from Innovative Power Products (IPP).
Recently, Innovative Power Products (IPP) received a notification from Materion, one of the largest suppliers for Beryllium and Beryllium compounds in America, stating that OSHA has amended the law (29 CFR 1910.1024) that applies to the handling and processing of Beryllium which took effect December 12, 2018.
The amendment requires significant changes to the way IPP handles Beryllium. Sadly, this change has forced IPP to stop producing products containing Beryllium. This affects IPP Resistors, Terminations and Attenuators which are produced using Beryllium Oxide (BeO) ceramics.
IPP is diligently working on offering similar products manufactured on Aluminum Nitride ceramic substrates for replacements in the near future.
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
