SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- February 28, 2019
SSPA 27.0-31.0-20 operates from 27-31 GHz.
It is packaged in an enclosure that is optimized for high shock and vibration requirements. Nominal output power is 20 watts typical. Typical power gain is 43 dB minimum. Input and output VSWR is 2.0:1 maximum. This SSPA can be blanked on and off in less than 10.0 uSec. OIP3 is 47 dBm minimum. This SSPA operates from a +28Vdc power supply. Standard features include reverse polarity protection and output short and open circuit protection. This power amplifier module operates from -40°C to +70°C base plate temperature. There is also an over-temperature shut down feature to protect the amplifier. Other key points of this design are:
Download the Data-Sheet_SSPA-27.0-31.0-20
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
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