SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- December 11, 2017
A two part blog series by Qorvo.
This is the first of a two-part blog series that looks at the design challenges for Wi-Fi front-end designs. Part 2 will examine coexistence and interference.
For wireless access points or customer premises equipment (CPE), it can be hard to fully account for thermal management and the parameters affected by it prior to FCC certification. To save yourself the headaches of last-minute changes due to interference, coexistence or RF front-end (RFFE) linearity, be sure to design using component thermal parameters in mind. This blog post explains the biggest thermal challenges facing Wi-Fi front-end designs.
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
