SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- February 28, 2019
3.5GHz – 96MHz
Features:
Maximum Ratings
| Parameter | Unit | Minimum | Typical | Maximum |
| Operating Temperature Range | ℃ | -40 | 25 | 85 |
| Storage Temperature Range | ℃ | -40 | 25 | 85 |
| Power Handling Capability Watt | – | – | 2 |
Electrostatics Sensitive Device (ESD)
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