SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- January 12, 2023
QPF5005 is a multi-die front-end module (FEM) designed for 8 – 12 GHz X-Band applications. The FEM integrates T/R switch, limiter, low-noise amplifier, and power amplifier. Transmit power is 5 W saturated, receiver noise figure is 2.2 dB. Lead free and RoHS compliant.
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