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7W, DC-25GHz, GaN on SiC RF HEMT Die

7W, DC-25GHz, GaN on SiC RF HEMT Die

DC – 25 GHz, 7 Watt, 28 V GaN RF Transistor

Key Features

  • Frequency Range: DC – 25 GHz
  • Output Power (P3dB): 7.2 W at 10 GHz
  • Linear Gain: 15 dB typical at 10 GHz
  • Typical PAE3dB: 57% at 10 GHz
  • Typical NF at 10 GHz: 1.3 dB
  • Operating voltage: 28V
  • CW and Pulse capable
  • 0.83 x 0.55 x 0.10 die

Typical Applications

  • Defense and Aerospace
  • Broadband wireless
Frequency Min(MHz) DC
Frequency Max(MHz) 25,000
Gain(dB) 15
Psat(dBm) 38.6
PAE(%) 57
Vd(V) 28
Idq(mA) 80
Package Type die
Package(mm) 0.83 x 0.55 x 0.10
RoHS Yes
Lead Free Yes
Halogen Free Yes
ITAR Restricted No

The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo’s proven QGaN15 process. The device can support pulsed, CW, and linear operations.


Product Data Sheet

Application Note: GaN Bias Circuit Design Guidelines

Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

White Paper: GaAs and GaN Die Assembly and Handling Procedures


IMS2024 in Washington D.C

Wireless Components is thrilled to announce the attendance of our Managing Director, Shane, and General Manager, Sean, at IMS2024 – 16-21 June 2024, Washington, DC. Shane