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7W, DC-25GHz, GaN on SiC RF HEMT Die

7W, DC-25GHz, GaN on SiC RF HEMT Die

DC – 25 GHz, 7 Watt, 28 V GaN RF Transistor

Key Features

  • Frequency Range: DC – 25 GHz
  • Output Power (P3dB): 7.2 W at 10 GHz
  • Linear Gain: 15 dB typical at 10 GHz
  • Typical PAE3dB: 57% at 10 GHz
  • Typical NF at 10 GHz: 1.3 dB
  • Operating voltage: 28V
  • CW and Pulse capable
  • 0.83 x 0.55 x 0.10 die

Typical Applications

  • Defense and Aerospace
  • Broadband wireless
Frequency Min(MHz) DC
Frequency Max(MHz) 25,000
Gain(dB) 15
Psat(dBm) 38.6
PAE(%) 57
Vd(V) 28
Idq(mA) 80
Package Type die
Package(mm) 0.83 x 0.55 x 0.10
RoHS Yes
Lead Free Yes
Halogen Free Yes
ITAR Restricted No

The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo’s proven QGaN15 process. The device can support pulsed, CW, and linear operations.


Product Data Sheet

Application Note: GaN Bias Circuit Design Guidelines

Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

White Paper: GaAs and GaN Die Assembly and Handling Procedures