SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- December 7, 2022
TGF2933
DC – 25 GHz, 7 Watt, 28 V GaN RF Transistor
Key Features
Typical Applications
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 25,000 |
| Gain(dB) | 15 |
| Psat(dBm) | 38.6 |
| PAE(%) | 57 |
| Vd(V) | 28 |
| Idq(mA) | 80 |
| Package Type | die |
| Package(mm) | 0.83 x 0.55 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo’s proven QGaN15 process. The device can support pulsed, CW, and linear operations.
Downloads:
Application Note: GaN Bias Circuit Design Guidelines
Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
White Paper: GaAs and GaN Die Assembly and Handling Procedures
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