SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- October 31, 2019
The LA004060-G40P10_A by Panda Microwave.
The LA004060-G40P10_A is a Low Noise Amplifier module operating in the 0.4 to 6 GHz frequency range. The Low Noise Amplifier offers 10 dBm minimum P-1dB output power and 40 dB min small signal gain with ±2.0 dB maximum gain flatness. The Low Noise Amplifier requires typically a 12V DC power supply. The connectorized SMA-Female module is unconditionally stable, operates over the temperature range of -55°C and +85°C, and has a heatsink and fan for proper operation.
Specifications:
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
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