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Thermal Design for Semiconductors and High Power GaN

Thermal Design for Semiconductors and High Power GaN

GaN PAs have taken over the high-power final stage of the RF Front-End. Having a negative gate bias makes it different and sometimes challenging in design from other technologies, but its abilities are unmatched in many applications. Check out how Qorvo’s power management solutions make GaN’s gate bias differences disappear.

Thermal design is a vitally important topic, but sometimes it can seem like a mysterious world of rules, acronyms and equations. But it cannot be ignored: temperature is the biggest environmental reason most semiconductors fail in real-world applications, and every degree rise will reduce a component’s expected lifetime.

In this article, we’ll look at some of the key thermal-related issues design engineers should consider. Specifically, we’ll discuss high-power gallium nitride (GaN) devices and the thermal issues related to their usage.

Good thermal design is essential for reliable operation in the field, particularly for high-power components that generate substantial amounts of heat.

By following best practice thermal design techniques, engineers can ensure they optimize their systems to minimize problems and extend component lifetimes as far as possible.

About the Author

David Schnaufer
Technical Marketing Communications Manager

David is the public voice for Qorvo’s applications engineers. He provides technical insight into RF trends as well as tips that help RF engineers solve complex design problems.

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