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SiC FET UF4SC120023B7S 1200 V, 35 mohm

SiC FET UF4SC120023B7S 1200 V, 35 mohm

Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.


  • VDS Max(V): 1,200
  • RDS(on) Typ @ 25C(mohm): 35
  • ID Max(A): 47
  • Generation: Gen 3
  • Tj Max(°C): 175
  • Automotive Qualification: No
  • Package Type: D2PAK-7L

Typical Applications:

  • Telecom and Server Power
  • Industrial Power Supplies
  • Power Factor Correction Modules
  • Motor Drives
  • Induction Heating

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Wireless Components is thrilled to announce the attendance of our Managing Director, Shane, and General Manager, Sean, at IMS2024 – 16-21 June 2024, Washington, DC. Shane

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