SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- June 18, 2023
| Technology | BAW |
| Type | Infrastructure |
| Bands | North America C-band |
| Frequency(MHz) | 3.7 to 3.98 |
| Bandwidth(MHz) | 280 |
| Insertion Loss(dB) | 3.5 max |
| I/O Configuration | SI / SO |
| Package Type | SMT |
| Package(mm) | 2 x 1. |
The QPQ3509 is an exceptionally high-performance BAW, 280 MHz band pass Filter. This filter is housed in a compact 2.0 x 1.6 mm package for base station applications. Low insertion loss coupled with high attenuation makes this filter an ideal choice for US 5G applications of Small Cell and Radio DOT system.
The QPQ3509 is part of Qorvo’s extensive portfolio of RF BAW and SAW filters.
Contact us today for more information
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
