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QPD1425L Transistor RF, 375W, DC-2GHz GaN on SiC

QPD1425L Transistor RF, 375W, DC-2GHz GaN on SiC

QPD1425L from Qorvo is a High-Electron-Mobility Transistor (HEMT).  QPD1425L operates from 1.2 to 1.4 GHz. Typically, this provides 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency. QPD1425L GaN RF Power Transistors are housed in an industry-standard air cavity package and supports both pulsed and CW operation.

PD1425L Paramaters

Frequency Min(MHz) 1,200
Frequency Max(MHz) 1,400
Gain(dB) 17
Psat(dBm) 56.3
Drain Efficiency(%) 75
Vd(V) 65
Idq(mA) 430
Package Type NI-400
Package(mm) 10.16 x 10.16 x 4.06

Typical Applications

    • L-Band Radar
    • ISM

 

 

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