QPD1425L from Qorvo is a High-Electron-Mobility Transistor (HEMT). QPD1425L operates from 1.2 to 1.4 GHz. Typically, this provides 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency. QPD1425L GaN RF Power Transistors are housed in an industry-standard air cavity package and supports both pulsed and CW operation.
|Package(mm)||10.16 x 10.16 x 4.06|
- L-Band Radar
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