SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- July 6, 2023
QPD1425L from Qorvo is a High-Electron-Mobility Transistor (HEMT). QPD1425L operates from 1.2 to 1.4 GHz. Typically, this provides 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency. QPD1425L GaN RF Power Transistors are housed in an industry-standard air cavity package and supports both pulsed and CW operation.
PD1425L Paramaters
| Frequency Min(MHz) | 1,200 |
| Frequency Max(MHz) | 1,400 |
| Gain(dB) | 17 |
| Psat(dBm) | 56.3 |
| Drain Efficiency(%) | 75 |
| Vd(V) | 65 |
| Idq(mA) | 430 |
| Package Type | NI-400 |
| Package(mm) | 10.16 x 10.16 x 4.06 |
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
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