SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- June 18, 2023
Qorvo’s QPC1008 is a negative voltage controlled, wideband GaAs MMIC 5-bit digital step attenuator combined with a 1 dB voltage variable attenuator (VVA), housed in a leadless 3.9 x 3.9 mm surface mount package. Each digital bit is controlled by a single voltage of either 0 V or -5 V, while the VVA is controlled using a single voltage varied from -5 V to 0 V. The digital bit values are 1 (LSB), 2, 4, 8, and 16 dB, when combined with the 1 dB analog bit, a total of 32 dB of attenuation is achieved. The QPC1008 has low insertion loss of 5.5 dB at 10 GHz and is 50 ohms matched eliminating the need for RF port matching.
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 20,000 |
| Insertion Loss(dB) | 5 |
| Attenuation Range(dB) | 32 |
| IP1dB(dBm) | 22 |
| IIP3(dBm) | 33 |
| Interface | Parallel |
| Bits | 5 |
| Step Size(dB) | 1 |
| Voltage(V) | (DCA) -2.5 to -5.5, (ACV) 0 to -5 |
| Package Type | QFN |
| Package(mm) | 3.9 x 3.9 |
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