SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- November 6, 2023
The Qorvo® QPF4259 and QPF4559 are integrated front end modules (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.
Performance is focused on optimizing the PA for a 5V supply voltage that conserves power consumption while maintaining the highest linear output power and leading-edge throughput. Integrated die level filtering for 2nd and 3rd harmonics as well as 5 GHz(QPF4259) and 2.4 GHz (QPF4559) rejection for DBDC operation are included. A coupler with RF output as well as a broad range, constant slope voltage logarithmic power detector is provided for application feedback.
The QPF4259 integrates a 2.4 GHz power amplifier (PA), single pole two throw switch (SP2T) and bypassable low noise amplifier (LNA) into a single device.
The QPF4559 integrates a 5 GHz power amplifier (PA), single pole two throw switch (SP2T) and bypassable low noise amplifier (LNA) into a single device.
| QPF4259 | QPF4559 |
| Access points | Access points |
| Wireless Routers | Wireless Routers |
| Set Top Boxes | Residential Gateways |
| Customer premise Equipment | Customer premise Equipment |
| Internet of Things | Internet of Things |
|
|
QPF4259 | QPF4559 |
| Frequency Min(GHz) | 2.412 | 5.17 |
| Frequency Max(GHz) | 2.484 | 5.895 |
| Functionality | PA, Switch, LNA | PA, Switch, LNA |
| Wi-Fi Standards | Wi-Fi 7 | Wi-Fi 7 |
| Vcc(V) | 5 | 5 |
| 11ac Pout(dBm) | 21 | |
| 11n Pout(dBm) | 26 | |
| 11n EVM(%) | -30 | |
| 11n Current(mA) | 365 | |
| Tx Gain(dB) | 33 | 32 |
| OP1dB(dBm) | 31 | 31 |
| Rx Gain(dB) | 16, 4 | 16 |
| NF(dB) | 1.5, 2.6 | 1.6 |
| Bypass Loss(dB) | 6 | 7 |
| Rx Current(mA) | 13 | 18 |
| Package Type | Laminate | Laminate |
| Package(mm) | 5.0 x 3.0 | 3.0 x 3.0 |
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
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