SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- July 1, 2023
QPB0618N is equipped with an integrated bias card, and is a solid state, spatial
combining amplifier with an operating range of 6–18 GHz.
QPB0618N Product Features:
| Frequency Range: | 6 – 18 GHz |
| Saturated Output Power: | 53.9 dBm (PIN = 43 dBm) |
| Large Signal Gain: | 10.9 dB (PIN = 43 dBm) |
Also of note.
• Solid State MMIC Reliability
• Multi-Element Redundancy
• Instant On (no warm-up)
• Integrated Bias Card
QPB0618N Application:
TWTA Replacement
Contact us today for more information.
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