SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- November 6, 2023
The controls we use to interact with systems or machines have dramatically changed. The humble beginnings of rotary dials on phones, on/off switches, or physical keys to open car doors have transformed into sleek and intuitive interfaces that empower us to connect seamlessly with machines. Here we look at how Human-Machine Interfaces (HMIs) are revolutionizing our interaction with technology.
Transforming Touch with Qorvo SensorFusion™
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Qorvo’s sensors transform touch and elevate your end user’s experience. Our technology works with a multitude of inputs, is immune to most environmental factors and works with any material.
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
Qorvo’s QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo’s production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz
Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier, an excellent alternative to traveling wave tube amplifiers. With an operating range of 2–6 GHz,
Innovative Power Products leads the RF industry with reliable, high power hybrid couplers ranging from HF to X band. The new IPP-7153 90-degree SMD hybrid
