SiC FET UF4SC120023B7S 1200 V, 35 mohm
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
- July 2, 2023
QPL7420 offers low noise and distortion plus high gain in a 3 x 3 QFN package.
This amplifier is a GaAs pHEMT single ended RF amplifier IC featuring 20 dB of flat gain and low noise.
Key Features:
| Gain: | 20 dB Typical |
| Noise Figure: | 1.1 dB Typical at 850 MHz |
5 MHz to 1800 MHz Operation
3 V, 5 V, and 8 V Operation
Adjustable Bias Using External Resistors
Convenient QFN Package
RoHS Compliant
Applications:
• DOCSIS 3.1
• Downstream Applications, 47 to 1800 MHz
• Upstream Applications, 5 to 684 MHz
• Head End CMTS Equipment
• Optical Node
• FTTH GPON and GEPON
• Satellite Low Noise Amplifier
• Cable Modem and Set Top Box
• Single Ended Gain Block
Qorvo’s UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC
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